Adaptively Biased Output Cap-Less NMOS LDO With 19 ns Settling Time

摘要

This paper presents an output external capacitor-less, fully integrated, fast settling NMOS low dropout (LDO) regulator with adaptively biased error amplifier (EA) for system-on-chip core applications. The adaptive biasing technique increases both loop bandwidth and slew-rate of the LDO by 100% at full load condition without changing no-load quiescent current. Direct feedback to gate-to-source voltage of the NMOS regulation FET provides fast load transient response. The proposed LDO employs a cross-coupled common-gate input based EA, with transconductance boosting, achieving twice unity-gain bandwidth in comparison to a typical folded-cascade common-source input stage. Low output impedance of NMOS regulation stage and low input impedance of the EA reduce load dependent stability issue. The proposed regulator is designed and fabricated in a 0.18-mu m CMOS technology with die-area of 0.21 mm(2). The LDO generates a regulated output voltage of 1.4-1.6 V from an input voltage of 1.6-1.8 V, consumes 133 mu A quiescent current, and supports 0 pF to 50 pF load capacitance. Measured results show 166 mV undershoot with 19 ns settling time for a load step from 9 mA to 40 mA in 350 ps edge-time for zero-load capacitance. After using adaptive biasing, the settling time is reduced by 37% and 36% for 0 pF and 50 pF load, respectively.