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Non-catalytic and template-free growth of aligned CdS nanowires exhibiting high field emission current densities

机译:展示高场发射电流密度的CdS纳米线的无催化和无模板生长

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摘要

Various CdS nanostructures, including nanoparticle film, bundles of quasi-aligned and well-aligned nanowires, were fabricated with a non-catalytic and template-free MOCVD process. The well-aligned CdS nanowires exhibit unusually high field emission current densities of 225 mA cm(-2) at the applied electric field of 20 V mu m(-1).
机译:各种CdS纳米结构,包括纳米颗粒薄膜,准对准和良好对准的纳米线束,都是通过非催化和无模板的MOCVD工艺制造的。良好排列的CdS纳米线在施加的20 Vμm(-1)电场下表现出异常高的225 mA cm(-2)场发射电流密度。

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