DLTS study of annihilation of oxidation induced deep-level defects in Ni/SiO₂-Si MOS structures

摘要

This paper describes the fabrication of MOS capacitor and DLTS study of annihilation of deeplevel defects upon thermal annealing. Ni/SiO₂-Si MOS structures fabricated on n-type Si wafers were investigated for process-induced deep-level defects. The deep-level traps in Si substrates induced during the processing of Ni/SiO₂-Si have been investigated using deep-level transient spectroscopy (DLTS). A characteristic deep-level defect at E _C = 0·49 eV which was introduced during high-temperature thermal oxidation process was detected. The trap position was found to shift to different energy levels (E _C = 0·43, 0·46 and 0·34 eV) during thermal annealing process. The deep-level trap completely anneals at 350°C. Significant reduction in trap density with an increase in recombination life time and substrate doping concentration as a function of isochronal annealing were observed.