Laser annealing of sputter-deposited a-SiC and a-SiC_xN_y films

摘要

This work describes the laser annealing of a-SiC and a-SiC _x N _y films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of a-SiC _x N _y thin films were produced under different N₂/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiC _x N _y films.