机译:具有基于增强光响应的二维ZrNBR-Zrncl横向异质结的有前途的偏振敏感紫外光探测器:理论预测
Fudan Univ Dept Mat Sci Shanghai 200433 Peoples R China;
Fudan Univ Dept Mat Sci Shanghai 200433 Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Hongzhiwei Technol Shanghai Co Ltd Shanghai 201206 Peoples R China;
Shanghai Normal Univ Dept Phys Shanghai 200234 Peoples R China;
Photogalvanic effect; Ultraviolet photodetection; Two-dimensional materials; Quantum transport simulations; ZrNBr; ZrNCl;
机译:基于二维宽带隙半导体的高度极化敏感,可见盲,自动紫外线光电优化:理论预测
机译:具有通过脉冲激光沉积生长的高质量CSPBBR3薄膜的N-ZnO / P-GaN异质结紫外光探测器的增强光蚀刻
机译:陷阱辅助电荷乘法增强光孔光响应的LI-P编排P-ZnO / N-Si异质结紫外光探测器
机译:基于模拟的前照明和背照明GaN P-I-N紫外线光电探测器的光响应比较分析
机译:通过有源层优化和等离子体纳米结构在有机紫外光探测器中调谐和增强光谱光响应和增强
机译:基于NiO /β-Ga2O3异质结的高性能深紫外光电探测器
机译:基于双电缆聚合物/二维Perovskite异质结的横向光电探测器