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VISIBLE LIGHT DETECTOR WITH HIGH-PHOTORESPONSE BASED ON TiO2/MoS2 HETEROJUNCTION AND PREPARATION THEREOF
VISIBLE LIGHT DETECTOR WITH HIGH-PHOTORESPONSE BASED ON TiO2/MoS2 HETEROJUNCTION AND PREPARATION THEREOF
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机译:具有高光响应的可见光检测器,基于TiO2 / MOS2异质结和制备
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摘要
In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO2/MoS2 heterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS2, includes a MoS2 channel, a TiO2 modification layer, a SiO2 dielectric layer, Au source/drain electrodes and a Si gate electrode, The TiO2 modification layer is modified on the surface of the MoS2 channel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS2, depositing Ti on the channel surface, and natural oxidation.
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