Controlling N and C-atom densities in N_2/H_2 and N2/CH4 microwave afterglows for selective TiO_2 surface nitriding

摘要

Radiative states of N-2/5% H-2 and N-2/5 parts per thousand CH4 HF(microwave) flowing afterglows of microwave plasmas at reduced gas pressures (4-20 Torr) have been analyzed by emission spectroscopy. The N-2 1st pos (580 nm), 2nd pos (316 nm), N-2(+) 1st neg (391.4 nm), NH (336 nm) and CN (386 nm) bands in the pink (early) and the late afterglows were measured and the NO titration was used to determine the concentrations of N-atoms, O-atoms in impurity, N-2(X,v 13) and N-2(A) metastable molecules, N-2(+) ions. Introduction of small percentages of H-2 (or CH4) into N-2 lead to a size reduction of the early afterglow region which was followed by a late afterglow zone where the N + N recombination is the dominant process. In addition, it also gave an effect of reducing the densities of N atoms (as well as the N-2 excited states) in the afterglow regions. At the same time, it introduced other active species such as H (or C) atoms, of which the densities strongly vary depending on the percentage of H-2 (or CH4) in the mixture. Such changes in the densities of active species such as N and C atoms in the afterglow region had a strong influence on the incorporation characteristics of N atoms into the surface of TiO2 films introduced into the afterglow region. These results deliver an important meaning in devising process conditions especially for selective nitrogen or carbon doping into a skin-depth layers of oxide materials, which is desired in the case of preparing a few nm-thick functional films for photovoltaic and photocatalytic applications.