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Atomic layer deposition of titanium oxide and nitride on vertically aligned carbon nanotubes for energy dense 3D microsupercapacitors

机译:氧化钛和氮化物对垂直对准的碳纳米管进行能量致密3D微型电路管的原子层沉积

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摘要

This work demonstrates the use of ALD coatings in a full-cell 3D microsupercapacitor (MSC) device for the first time. The novel device design described herein has potential to be exploited for rapid and scalable manufacturing of on-chip MSCs integrated with other electronic devices in standard semiconductor fabs or foundries. In this study, atomic layer deposition (ALD) was used to deposit conformal pseudocapacitive coatings of titanium oxide (TiO_2) and titanium nitride (TiN) onto CVD-grown vertically aligned carbon nanotubes (VACNTs) to increase the area-specific capacitance (by 240 × and 74 × at 0.1 Vs~(-1) versus the as-deposited VACNT electrode and full-cell VACNT device, respectively) and thus energy density for microscale energy storage applications. The study indicated that combining TiO_2 and TiN ALD layers resulted in a multilayered composite coating rich in oxygen vacancies with enhanced capacitance relative to a single TiO_2 or TiN layer due to a dynamic surface chemistry that developed during charge-discharge cycling. A key component of this multilayered coating was the formation of titanium oxynitride (TiON) which we attributed to the improved performance. Further, we demonstrated that controlling the thickness and stoichiometric ratio of the TiN-TiO_2 composite coating was key to enabling functionality and optimizing the symmetric 3D MSC device performance.
机译:这项工作首次演示了在全池3D微型电路通信机(MSC)装置中使用ALD涂层。本文描述的新颖设备设计具有可被利用用于在标准半导体Fabs或奖励中与其他电子设备集成的片上MSC的快速和可扩展的制造。在该研究中,原子层沉积(ALD)用于将氧化钛(TiO_2)和氮化钛(TiN)的共形伪涂层涂层沉积在CVD-生长的垂直对准的碳纳米管(VACNTS)上以增加面积特异性电容(通过240 ×和74×分别为0.1Vs〜(-1),分别与沉积的VACNT电极和全细胞VACT装置,从而为微观能量存储应用的能量密度。该研究表明,组合TiO_2和锡ALD层导致多层复合涂层富含氧空位的氧空位,由于在充电 - 放电循环期间开发的动态表面化学而具有相对于单个TiO_2或锡层的电容。这种多层涂层的关键组分是我们归因于改善性能的氮氧化钛(TiOC)的形成。此外,我们证明,控制锡 - TiO_2复合涂层的厚度和化学计量比是能够实现功能和优化对称3D MSC器件性能的关键。

著录项

  • 来源
    《Applied Surface Science》 |2020年第15期|146349.1-146349.8|共8页
  • 作者单位

    Georgia Tech Manufacturing Institute 813 Ferst Dr. NW Atlanta GA 30332 United States School of Materials Science and Engineering Georgia Tech North Avenue Atlanta GA 30332 United States;

    Georgia Tech Manufacturing Institute 813 Ferst Dr. NW Atlanta GA 30332 United States School of Materials Science and Engineering Georgia Tech North Avenue Atlanta GA 30332 United States School of Industrial and Systems Engineering Georgia Tech North Avenue Atlanta GA 30332 United States;

    Georgia Tech Manufacturing Institute 813 Ferst Dr. NW Atlanta GA 30332 United States;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Titanium oxide; Titanium nitride; Titanium oxynitride; Atomic layer deposition; Vertically aligned carbon nanotubes; Microsupercapacitors;

    机译:氧化钛;氮化钛;氮氧化钛;原子层沉积;垂直对准的碳纳米管;Microsupercapacitors.;

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