机译:氧化钛和氮化物对垂直对准的碳纳米管进行能量致密3D微型电路管的原子层沉积
Georgia Tech Manufacturing Institute 813 Ferst Dr. NW Atlanta GA 30332 United States School of Materials Science and Engineering Georgia Tech North Avenue Atlanta GA 30332 United States;
Georgia Tech Manufacturing Institute 813 Ferst Dr. NW Atlanta GA 30332 United States School of Materials Science and Engineering Georgia Tech North Avenue Atlanta GA 30332 United States School of Industrial and Systems Engineering Georgia Tech North Avenue Atlanta GA 30332 United States;
Georgia Tech Manufacturing Institute 813 Ferst Dr. NW Atlanta GA 30332 United States;
Titanium oxide; Titanium nitride; Titanium oxynitride; Atomic layer deposition; Vertically aligned carbon nanotubes; Microsupercapacitors;
机译:氧化钛的原子层沉积,用于垂直排列的碳纳米管超级电容器电极的伪电容功能化
机译:用原子层沉积可控合成芯鞘结构对准碳纳米管/二氧化钛杂化纤维
机译:无粘结剂混合电容器的新型锰氧化物原子层沉积工艺对垂直取向碳纳米管的涂层
机译:用原子力显微镜观察密度填充垂直对准碳纳米管膜的摩擦摩擦变化的相关性
机译:用于直接板衬和铜扩散阻挡层应用的钌-氮化钛混合相层的等离子体增强原子层沉积。
机译:缓冲层的原子层沉积用于垂直排列的碳纳米管阵列的生长。
机译:用原子层沉积与半导体纳米颗粒的垂直对准碳纳米管的装饰
机译:碳纳米管和致密垂直排列纳米管阵列的分子射流生长。