A comparative investigation of hetero-epitaxial TiC thin films deposited by magnetron sputtering using either hybrid DCMS/HiPIMS or reactive DCMS process

摘要

A hybrid direct current magnetron sputtering/high-power impulse magnetron sputtering (DCMS/HiPIMS) technique was used to improve the structural and electrical properties of single-crystal titanium carbide (TiC) thin films. The hetero-epitaxial TiC films, similar to 60 nm thick, were grown on MgO (001) substrates at temperatures ranging from 200 degrees C to 800 degrees C, by co-sputtering of Ti and C targets powered by DCMS and HiPIMS, respectively. Films' composition and the structural, morphological, and electrical properties were comparatively investigated to those of a set of samples deposited at same temperatures by reactive-DCMS (R-DCMS) in Ar/CH4 atmosphere. The composition and the FWHM of rocking curves of the films deposited by R-DCMS varied from TiC0.84 to TiC0.94 and from 1.38 degrees to 0.64 degrees, respectively, as the growth temperature increased. TiC0.94 - TiC0.96 layers were deposited by hybrid DCMS/HiPIMS method at temperatures higher than 400 degrees C, fully strained over their full thickness, with FWHM of rocking curves of about 0.13 degrees. Electrical resistivity values measured for these films were of about 155 mu Omega cm, significantly close to those corresponding to bulk TiC0.95 single crystals. The resistivity of R-DCMS films is higher by 6% to 23% in comparison with that of the DCMS/HiPIMS grown samples, depending on the growth temperature.