A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping

著录项

• 来源
  《Applied Surface Science》 |2020年第1期|146314.1-146314.5|共5页
• 作者

  Lee Ji-Eun; Hwang Jinwoong; Kang Minhee; Joo Hyun-Jeong; Ryu Hyejin; Kim Kyoo; Kim Yongsam; Kim Namdong; Anh Tuan Duong; Cho Sunglae; Mo Sung-Kwan; Hwang Choongyu; Yang Imjeong Ho-Soon;

  展开▼
• 作者单位

  Pusan Natl Univ Dept Phys Busan 46241 South Korea|Korea Inst Sci & Technol Ctr Spintron Seoul 02792 South Korea;

  Pusan Natl Univ Dept Phys Busan 46241 South Korea|Lawrence Berkeley Natl Lab Adv Light Source Berkeley CA 94720 USA;

  Pusan Natl Univ Dept Phys Busan 46241 South Korea;

  Pusan Natl Univ Dept Phys Busan 46241 South Korea;

  Korea Inst Sci & Technol Ctr Spintron Seoul 02792 South Korea;

  Korea Atom Energy Res Inst 111 Daedeok Daero 989Beon Gil Daejeon 34057 South Korea|Max Plank POSTECH Korea Res Initiat MPK Max Planck POSTECH Hsinchu Ctr Complex Phase Mat Gyeongbuk 37673 South Korea;

  Pohang Univ Sci & Technol Pohang Accelerator Lab Gyeongbuk 37673 South Korea;

  Pohang Univ Sci & Technol Pohang Accelerator Lab Gyeongbuk 37673 South Korea;

  Univ Ulsan Dept Phys Ulsan 44610 South Korea;

  Univ Ulsan Dept Phys Ulsan 44610 South Korea;

  Lawrence Berkeley Natl Lab Adv Light Source Berkeley CA 94720 USA;

  Pusan Natl Univ Dept Phys Busan 46241 South Korea;

  Pusan Natl Univ Dept Phys Busan 46241 South Korea;

  展开▼
• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词