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EFFECT OF SURFACE DOPING ON THE CHARACTERISTICS OF GaAs P-N JUNCTIONS AS GAS SENSORS

机译：表面掺杂对GaAs P-N结特性的影响气体传感器

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О. О. Птащенко; Ф. О. Птащенко; В. Р. Гільмутдінова;
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1. Fabrication of two-dimensional p-n junctions formed by compensation doping of p-modulation doped GaAs/ln(y)Ga(1-y)As/AlxGa1-x As hetero structures [J] . Reuter D, Werner C, Riedesel C, Physica, E. Low-dimensional systems & nanostructures . 2004,第1a3期

机译：通过对p调制掺杂的GaAs / ln（y）Ga（1-y）As / AlxGa1-x As杂结构进行补偿掺杂而形成的二维p-n结
2. Efficiency Enhancement of Single-Junction GaAs Solar Cells with Gradually Doped p-n Junction Active Layers [J] . Jung Sang Hyun, Kim Youngjo, Kim Chang Zoo, Science of advanced materials . 2018,第4期

机译：逐渐掺杂p-n结有源层的单结GaAs太阳能电池的效率增强
3. Electrical characteristics of homoepitaxial p-GaSb analyzed by the p-n junction: A correction on the Hall parameter of heteroepitaxial p-GaSb/SI-GaAs [J] . Kim J.O., Noh S.K. Current applied physics: the official journal of the Korean Physical Society . 2012,第6期

机译：P-n结分析的主页P-GASB的电气特性：异质轴P-GASB / SI-GAAs的展厅参数校正
4. Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer [C] . Tae Geun Kim, Eun Kyu Kim . 1996

机译：GaAs / AlGaAs量子线激光器及其具有有效P-n结电流阻挡层的阵列的激光发射特性
5. Generation and Enhancement of Surface Acoustic Waves on Highly Doped P-type GaAs and Its Photoelectric Applications [D] . Dong, Boqun . 2020

机译：高掺杂P型GaAs上表面声波的产生和增强及其光电应用
6. Enhancing Photovoltaic Performance of GaAs Single-Junction Solar Cells by Applying a Spectral Conversion Layer Containing Eu-Doped and Yb/Er-Doped Phosphors [O] . Wen-Jeng Ho, Jheng-Jie Liu, Zong-Xian Lin, 2019

机译：通过应用包含Eu掺杂和Yb / Er掺杂的磷光体的光谱转换层来增强GaAs单结太阳能电池的光伏性能
7. Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy [O] . B R Borodin, P A Alekseev, M S Dunaevskiy, 2019

机译：通过导电原子力显微镜用轴向P-n结的水平GaAs纳米线掺杂分布分析
8. Effects of Heavy Doping on the I-V Characteristics of Schottky Barrier and P-N Junctions. [R] . sheldon,john f. 1975

机译：重掺杂对肖特基势垒和p-N结的I-V特性的影响。

EFFECT OF SURFACE DOPING ON THE CHARACTERISTICS OF GaAs P-N JUNCTIONS AS GAS SENSORS

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