Dissociative adsorption of H_2O onto a Pt thin film in direct contact with GaN (0001): Effect of electronic communications between catalyst and a semiconducting support

Zhang Xueqian; Ptasinska Sylwia

首页> 外文期刊>Applied Surface Science >Dissociative adsorption of H_2O onto a Pt thin film in direct contact with GaN (0001): Effect of electronic communications between catalyst and a semiconducting support

【24h】

Dissociative adsorption of H_2O onto a Pt thin film in direct contact with GaN (0001): Effect of electronic communications between catalyst and a semiconducting support

机译：与GaN（0001）直接接触到PT薄膜上的H_2O在PT薄膜上的解离吸附：电子通信在催化剂和半导体支撑件之间的影响

获取原文

获取原文并翻译 | 示例

获取外文期刊封面目录资料

开具论文收录证明 >>

文献代查 >>

文献数据库（团队版） >>

页面导航

著录项
引文网络
相似文献
相关主题

著录项

来源
《Applied Surface Science》 |2020年第30期|146127.1-146127.7|共7页
作者
Zhang Xueqian; Ptasinska Sylwia;
展开▼
作者单位

Univ Notre Dame Radiat Lab Notre Dame IN 46556 USA|Univ Notre Dame Dept Chem & Biochem Notre Dame IN 46556 USA|Lawrence Berkeley Natl Lab Chem Sci Div 1 Cyclotron Rd Berkeley CA 94820 USA;

Univ Notre Dame Radiat Lab Notre Dame IN 46556 USA|Univ Notre Dame Dept Phys Notre Dame IN 46556 USA;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Strain dependence of dissociative adsorption of H_2O on epitaxially strained, out-of-plane polarized, BaTiO_3(001) thin films [J] . Wang J. L., She S. J., Gaillard F., Thin Solid Films . 2021,第Jana1期

机译：在外延应变的H_2O上的解离吸附的应变依赖性，外平面异化，BATIO_3（001）薄膜
2. Initial stages of the adsorption of Sc and ScN thin films on GaN(0001): First principles calculations [J] . J.Guerrero-Sanchez, Gregorio H.Cocoletzi, J.F. Rivas-Silva, Applied Surface Science . 2013,第Mara1期

机译：Sc和ScN薄膜在GaN（0001）上吸附的初始阶段：第一性原理计算
3. Computational Study Of Adsorption, Diffusion, And Dissociation Of Precursor Species On The Gan (0001) Surface During Gan Mocvd [J] . Yong Sun Won, Jinuk Lee, Changsung Sean Kim, Surface Science . 2009,第4期

机译：Gan Mocvd期间Gan（0001）表面上前体物质的吸附，扩散和解离的计算研究
4. Electronic Structure of Bilayer (Fe, Ni) Metallic a-AI_2O_3(0001) Catalysts Towards CH_4 Adsorption and Dissociation [C] . Kenneth Wong, Qinghua Zeng, Aibing Yu PRICM 7;Pacific Rim International Conference on Advanced Materials and Processing . 2011

机译：双层（Fe，Ni）金属a-Al_2O_3（0001）催化剂对CH_4吸附和解离的电子结构
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

机译：通过发光光谱和X射线衍射测定在6H-SiC（0001）衬底上生长的GaN和Al（x）Ga（1-x）N薄膜的应变和组成。
6. CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films [O] . Akira Kusaba, Guanchen Li, Pawel Kempisty, 2019

机译：有机金属气相外延过程中GaN（0001）和（000-1）的CH4吸附概率及其与膜中碳污染的关系
7. Dissociation of Al2O3(0001) Substrates and the Roles of Silicon and Oxygen in N-Type Gan Thin Solid Films Grown by Gas-Source Molecular Beam Epitaxy [O] . Van Nostrand, J., Solomon, J., Saxler, A., 2012

机译：Al2O3（0001）衬底的解离以及硅和氧在气源分子束外延生长的N型Gan薄膜中的作用
8. Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications; Final rept. 1 Mar 2005-30 Nov 2006 [R] . Chmelka, B. F. 2007

机译：用于光学和光电器件应用的介观结构薄膜中的半导体纳米晶体;最终的评论。 2005年3月1日至2006年11月30日

Dissociative adsorption of H_2O onto a Pt thin film in direct contact with GaN (0001): Effect of electronic communications between catalyst and a semiconducting support

著录项

引文网络

相似文献

相关主题

期刊订阅