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Copper sulfide nanoparticles as hole-transporting-material in a fully- inorganic blocking layers n-i-p perovskite solar cells: Application and working insights

机译:硫化铜纳米颗粒作为空穴输送材料,在完全无机封闭层N-I-P Perovskite太阳能电池:应用和工作见解

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One of the challenges in the field of perovskite solar cells (PSC) is the development of inorganic hole-transporting-materials (HTM) suitable for solution-processed deposition, in order to have cheaper, more stable and scalable devices. Herein, we report the synthesis and characterization of p-type copper sulfide nanoparticles for their application for the first time as a low-cost, fully-inorganic HTM in mesoscopic n-i-p PSC. By employing CuS combined with two different perovskites, CH3NH3PbI3 (MAPbI(3)) and (FAPbI(3))(0.78)(MAPbBr(3))(0.14)(CsPbI3)(0.08) (CsFAMAPbIBr), very high current densities and fill-factors are observed, suggesting an effective hole-extraction happening at the CuS interface. Noticeable, our cells exhibit one of the highest power conversion efficiencies (PCE) in n-i-p configuration employing a sole solution-processed inorganic HTM via non-toxic solvents, leading to 13.47% and 11.85% for MAPbI(3) and CsFAMAPbIBr, respectively. As a remark, such PCE values are only limited by a reduced open-circuit voltage around 0.8 V, due to different phenomena occurring at perovkite/CuS interface such as an increased non-radiative recombination, caused by considerable difference in valence band value, and the effect of CuS metallic character. Overall, these findings highlight CuS as an extremely cheap alternative to common organic HTMs and pave the way to new improvements employing this material in full-inorganic blocking layers PSC.
机译:钙钛矿太阳能电池(PSC)领域的挑战之一是适于溶液加工沉积的无机空穴传输材料(HTM)的发展,以具有更便宜,更稳定和可伸缩的装置。在此,我们报告了第一次作为脱模N-I-P PSC中的低成本,完全无机HTM施用P型硫化铜硫化物纳米颗粒的合成和表征。通过使用CUS与两种不同的钙酸盐,CH3NH3PBI3(MAPBI(3))和(FAPBI(3))(0.78)(MAPBBR(3))(0.14)(CSPBI3)(0.08)(CSFamapbibribl),非常高的电流密度和观察到填充因子,表明CUS接口发生了有效的孔提取。显着的,我们的细胞在N-I-P型构型中表现出最高的功率转换效率(PCE),其通过无毒溶剂采用唯一的溶液加工的无机HTM,分别导致MAPBI(3)和CSFamapbibri的13.47%和11.85%。作为一项备注,由于在佩罗夫克特/ CUS接口(例如增加的非辐射重组)中发生的不同现象,这种PCE值仅受0.8V的降低的开路电压限制为约0.8V。 CUS金属特征的影响。总体而言,这些发现突出了CUS作为普通有机HTM的极其便宜的替代品,并在全无机阻挡层PSC中铺平了采用这种材料的新改进。

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