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Copper sulfide nanoparticles as hole-transporting-material in a fully- inorganic blocking layers n-i-p perovskite solar cells: Application and working insights

机译:硫化铜纳米颗粒作为全无机阻挡层n-i-p钙钛矿太阳能电池中的空穴传输材料:应用和工作见解

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One of the challenges in the field of perovskite solar cells (PSC) is the development of inorganic hole-transporting-materials (HTM) suitable for solution-processed deposition, in order to have cheaper, more stable and scalable devices. Herein, we report the synthesis and characterization of p-type copper sulfide nanoparticles for their application for the first time as a low-cost, fully-inorganic HTM in mesoscopic n-i-p PSC. By employing CuS combined with two different perovskites, CH3NH3PbI3 (MAPbI(3)) and (FAPbI(3))(0.78)(MAPbBr(3))(0.14)(CsPbI3)(0.08) (CsFAMAPbIBr), very high current densities and fill-factors are observed, suggesting an effective hole-extraction happening at the CuS interface. Noticeable, our cells exhibit one of the highest power conversion efficiencies (PCE) in n-i-p configuration employing a sole solution-processed inorganic HTM via non-toxic solvents, leading to 13.47% and 11.85% for MAPbI(3) and CsFAMAPbIBr, respectively. As a remark, such PCE values are only limited by a reduced open-circuit voltage around 0.8 V, due to different phenomena occurring at perovkite/CuS interface such as an increased non-radiative recombination, caused by considerable difference in valence band value, and the effect of CuS metallic character. Overall, these findings highlight CuS as an extremely cheap alternative to common organic HTMs and pave the way to new improvements employing this material in full-inorganic blocking layers PSC.
机译:钙钛矿太阳能电池(PSC)领域的挑战之一是开发适用于固溶处理沉积的无机空穴传输材料(HTM),以使其具有更便宜,更稳定和可扩展的器件。本文中,我们首次报道了p型硫化铜纳米颗粒的合成和表征,这是它们在介观n-i-p PSC中的低成本,全无机HTM的首次应用。通过将CuS与两种不同的钙钛矿结合使用,CH3NH3PbI3(MAPbI(3))和(FAPbI(3))(0.78)(MAPbBr(3))(0.14)(CsPbI3)(0.08)(CsFAMAPbIBr),非常高的电流密度和观察到填充因子,表明在CuS界面发生了有效的空穴提取。值得注意的是,我们的电池在n-i-p配置中表现出最高的功率转换效率(PCE)之一,该解决方案使用通过无毒溶剂的唯一溶液处理的无机HTM,分别导致MAPbI(3)和CsFAMAPbIBr的13.47%和11.85%。值得一提的是,由于在价钙钛矿/ CuS界面处发生的不同现象,例如价带值的巨大差异引起的非辐射复合增加,PCE值仅受约0.8 V的开路电压降低的限制;并且CuS金属特性的影响。总体而言,这些发现突出表明CuS是普通有机HTM的一种非常便宜的替代品,并为在全无机阻隔层PSC中使用这种材料的新改进铺平了道路。

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