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Shape-controlled synthesis of AgBiS_2 nano-/microstructures using PEG- assisted facile solvothermal method and their functional properties

机译:agbis_2纳米/微结构的形状控制合成使用PEG辅助溶剂溶剂方法及其功能性能

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摘要

Shape-controlled synthesis of AgBiS2 nano-/microstructures by a facile solution-based route is reported. One-dimensional AgBiS2 nano-/microspheres were synthesized through solvothermal method using ethylene glycol as the solvent and polyethylene glycol (PEG) as a soft template. The growth mechanisms related to the morphology control and phase formation of AgBiS2 were discussed. X-ray diffraction results confirmed that the cubic structure of AgBiS2 was formed for 0.04 mol of thiourea in the precursor solution. Raman spectrum of the AgBiS2 revealed the presence of the functional groups. X-ray photoelectron spectroscopy exhibited Ag 3d, Bi 4f and S 2s core levels for AgBiS2, thus confirming the pure and secondary phase of the samples. Field-emission scanning electron microscope and transmission electron microscope analyses exhibited the systematic transformation of agglomerated nanorods into microsphere, due to increase in the thiourea concentration. The vital role played by the thiourea concentration in modifying the morphology of AgBiS2, is discussed. Elemental mapping analysis confirmed the uniform distribution of the elements. The direct optical band gap of AgBiS2 nano-/microstructures vary from 0.98 to 1.01 eV. Synthesized samples were used to deposit thin films on FTO substrate using spray pyrolysis method. The I-V characteristics of the films exhibited ohmic nature and showed high conductivity for the nanorods sample.
机译:据报道了通过容易溶液的途径进行agbis2纳米/微结构的形状控制的合成。通过使用乙二醇作为溶剂和聚乙二醇(PEG)作为软模板,通过溶剂热法合成一维AGBIS2纳米/微球。讨论了与agbis2的形态控制和相形成相关的生长机制。 X射线衍射结果证实,在前体溶液中形成了AgBis2的立方结构,形成了0.04mol硫脲。 AGBIS2的拉曼光谱显示出官能团的存在。 X射线光电子能谱表现出AgBIS2的Ag 3D,Bi 4F和S 2S核心水平,从而确认样品的纯和二次相。场发射扫描电子显微镜和透射电子显微镜分析表现出凝聚纳米棒进入微球的系统变化,由于硫脲浓度的增加。讨论了硫脲浓度在改变Agbis2的形态方面发挥的至关重要作用。元素映射分析证实了元素的均匀分布。 Agbis2纳米/微结构的直接光带隙从0.98至1.01eV的变化。使用喷雾热解法使用合成样品在FTO底物上沉积薄膜。薄膜的I-V特性表现出欧姆的性质,并为纳米棒样品显示出高导电性。

著录项

  • 来源
    《Applied Surface Science》 |2019年第1期|664-673|共10页
  • 作者单位

    SRM Inst Sci & Technol Dept Phys & Nanotechnol Crystal Growth & Thin Film Lab Kattankulathur 603203 Tamil Nadu India;

    SRM Inst Sci & Technol Dept Phys & Nanotechnol Funct Mat & Energy Devices Lab Kattankulathur 603203 Tamil Nadu India;

    SRM Inst Sci & Technol Dept Phys & Nanotechnol Funct Mat & Energy Devices Lab Kattankulathur 603203 Tamil Nadu India|SRM Inst Sci & Technol NRC Kattankulathur 603203 Tamil Nadu India;

    SRM Inst Sci & Technol Dept Phys & Nanotechnol Crystal Growth & Thin Film Lab Kattankulathur 603203 Tamil Nadu India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Semiconducting chalcogenide; AgBiS2; Chemical route; Morphology; X-ray photoelectron spectroscopy; I-V characteristics;

    机译:半导体硫属化物;Agbis2;化学路线;形态;X射线光电子体光谱;I-V特征;

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