Robust sandwiched fluorinated graphene for highly reliable flexible electronics

摘要

The high sensitivity of graphene to the surface condition of the gate dielectric layer and its poor van der Waals adhesion with a flexible substrate result in interfacial sliding and fracturing of graphene at low strains, making the successful utilization of pristine graphene (PG) in flexible electronics challenging. Here, we report a facile method for the fabrication of flexible graphene field effect transistors (F-GFETs) using sandwiched fluorinated graphene (FG). The "FG-PG-FG" sandwich structure shows a high optical transparency (> 94%) with an average carrier mobility above 340 cm(2)/V.s, higher than that obtained when GO and Ion gel were used as gate dielectric materials on F-GFETs and a relatively low gate leakage current of similar to 160 pA. Furthermore, we observed a high mechanical stability, retaining > 88% of the original current output against bending deformation of up to 6 mm and > 77% after 200 bending cycles by applying a tensile strain of 1.56%, compared to the control sample. This improved performance is attributed to the fact that the sandwiched FG provides a good dielectric environment by tuning the C/F ratio, which tightly fixes the PG under strain. These findings provide a new route for the future development of graphene-based flexible electronics.