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Overcoming the insulating materials limitation in HiPIMS: Ion-assisted deposition of DLC coatings using bipolar HiPIMS

机译:克服HiPIMS中的绝缘材料限制:使用双极HiPIMS的离子辅助沉积DLC涂层

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摘要

The present study aims to demonstrate that operating the HiPIMS discharge in bipolar regime (BP-HiPIMS) enables an energy-enhanced deposition process of high-quality hydrogen-free DLC thin films (high hardness, low coefficient of friction, good wear resistance, good adherence to the substrate and very low surface roughness). The structural and mechanical properties of DLC thin films deposited using the BP-HiPIMS technique were compared to those of the films prepared using a conventional HiPIMS process, under various deposition conditions. The BP-HiPIMS technique generates an energetic ion population and a substantial increase in the ion flux as compared to the conventional (monopolar) HiPIMS. This phenomenon overcomes the limitations when working with insulating or high electrical resistivity materials (both substrates and coatings), i.e. the need to accelerate the film-forming species. Energetic enhanced deposition conditions during bipolar HiPIMS facilitate the densification (up to 2.7 g/cm(3)) of amorphous carbon thin films which results in an increase in the film hardness (23 GPa) when depositing on Si substrates, without using substrate bias voltage, adhesion interfacial layer or substrate pre-treatment. Besides high hardness, the BP-HiPIMS process allows growing DLC coatings with good elastic strain to failure and high resistance to plastic deformation and cracking.
机译:本研究旨在证明在双极状态下运行HiPIMS放电(BP-HiPIMS)可以实现高质量无氢DLC薄膜的能量增强沉积工艺(高硬度,低摩擦系数,良好的耐磨性,良好的对基材的附着力和非常低的表面粗糙度)。在不同的沉积条件下,将使用BP-HiPIMS技术沉积的DLC薄膜的结构和机械性能与使用常规HiPIMS工艺制备的薄膜的结构和机械性能进行了比较。与常规(单极)HiPIMS相比,BP-HiPIMS技术可产生高能离子,并且离子通量会大大增加。这种现象克服了使用绝缘或高电阻率材料(基材和涂层)时的局限性,即需要加速成膜物质。双极HiPIMS期间能量的增强沉积条件促进了非晶碳薄膜的致密化(高达2.7 g / cm(3)),这导致在不使用衬底偏置电压的情况下在Si衬底上沉积时膜硬度(23 GPa)的增加。 ,粘合界面层或基材的预处理。除了高硬度外,BP-HiPIMS工艺还可以使DLC涂层生长具有良好的弹性应变破坏能力,并具有很高的抗塑性变形和破裂性。

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