首页> 外文期刊>Applied Surface Science >Novel polystyrene/CeO_2-TiO_2 multicomponent core/shell abrasives for high-efficiency and high-quality photocatalytic-assisted chemical mechanical polishing of reaction-bonded silicon carbide
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Novel polystyrene/CeO_2-TiO_2 multicomponent core/shell abrasives for high-efficiency and high-quality photocatalytic-assisted chemical mechanical polishing of reaction-bonded silicon carbide

机译:新型聚苯乙烯/ CeO_2-TiO_2多组分核/壳磨料,用于反应结合碳化硅的高效,高质量的光催化辅助化学机械抛光

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Novel polystyrene (PS)/CeO2-TiO2 multicomponent core/shell abrasives were developed and exploited for high-efficiency and high-quality photocatalytic-assisted chemical mechanical polishing (PCMP) of the reaction-bonded silicon carbide (RB-SiC). Firstly, we proposed a modified process to synthesize the novel core/shell abrasives, which possessed a particular yielding effect and an enhanced photocatalytic activity. The as-synthesized abrasives were then characterized by FESEM and XRD, which showed that the CeO2-TiO2 shells were coated on the PS cores successfully, with the average particle size of ca. 200 nm (shell: 20 nm, core: 160 nm). PCMP experiments of RB-SiC were then conduct by exploiting deionized water contained 2.0 wt% CeO2, CeO2-TiO2, PS/CeO2, and PS/CeO2-TiO2 abrasives, respectively. Surface roughness values of RB-SiC before and after PCMP were measured by AFM, which showed that the core/shell based abrasives had the potential to obtain a better polishing quality compared with conventional abrasives. Material removal rates (MRRs) with CeO2-TiO2 based abrasives were higher than those of CeO2 based abrasives under ultraviolet (UV) irradiation. The best polishing performance (R-a: 0.497 nm, MRR: 1.223 mu m/h) was obtained with PS/CeO2-TiO2 abrasives under UV irradiation. Detailed action mechanisms for obtaining the better polishing quality and higher MRR were explained by the particular yielding effect of core/shell based abrasives and the enhanced photocatalytic activity of CeO2-TiO2 based abrasives, respectively.
机译:新型聚苯乙烯(PS)/ CeO2-TiO2多组分核/壳磨料已被开发并用于反应结合碳化硅(RB-SiC)的高效和高质量光催化辅助化学机械抛光(PCMP)。首先,我们提出了一种改进的方法来合成新型的核/壳磨料,它具有特殊的屈服效果和增强的光催化活性。然后用FESEM和XRD对合成后的磨料进行了表征,结果表明CeO2-TiO2壳层成功地被涂覆在PS核上,平均粒径约为。 200 nm(外壳:20 nm,核心:160 nm)。然后通过分别使用含有2.0 wt%CeO2,CeO2-TiO2,PS / CeO2和PS / CeO2-TiO2磨料的去离子水进行RB-SiC的PCMP实验。通过AFM测量PCMP前后RB-SiC的表面粗糙度值,这表明与常规磨料相比,基于核/壳的磨料具有获得更好的抛光质量的潜力。在紫外线(UV)照射下,基于CeO2-TiO2的磨料的材料去除率(MRR)高于基于CeO2的磨料的去除率。使用PS / CeO2-TiO2磨料在紫外线照射下可获得最佳抛光性能(R-a:0.497 nm,MRR:1.223μm / h)。分别基于核/壳基磨料的特殊屈服效果和增强的CeO2-TiO2基磨料的光催化活性解释了获得更好抛光质量和更高MRR的详细作用机理。

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