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Facile synthesis of reduced graphene oxide/tungsten disulfide/tungsten oxide nanohybrids for high performance supercapacitor with excellent rate capability

机译:还原性氧化石墨烯/二硫化钨/氧化钨纳米杂化物的快速合成,用于具有优异倍率性能的高性能超级电容器

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摘要

A facile synthesis strategy is developed for synthesizing nanohybrids of reduced graphene oxide/tungsten disulfide/tungsten oxide (G/TS/TO). The as-prepared nanohybrids can effectively combine the electrical double-layer capacitance and pseudo-capacitance when used as the working electrode of supercapacitor. The specific capacitance value of the G/TS/TO-based working electrode is 148.5 mF cm(-2) at current density of 0.1 mA cm(-2) in the three-electrode setup. Owing to the high electrical conductivity of tungsten oxide, large electrode/electrolyte interfaces of tungsten disulfide and facile electron transfer as well as high surface area of reduced graphene oxide, the G/TS/TO performs an excellent rate capability. A 90% capacitance retention after 3000 cycles of charge/discharge process is also obtained for the symmetrical all-solid-state supercapacitor device fabricated by G/TS/TO. This study provides a new research strategy for electrode materials based on tungsten-containing semiconductors in high rate capability supercapacitors.
机译:开发了一种用于合成还原型氧化石墨烯/二硫化钨/氧化钨(G / TS / TO)的纳米杂化物的简便合成策略。当用作超级电容器的工作电极时,所制备的纳米混合体可以有效地将双电层电容和伪电容结合起来。在三电极设置中,电流密度为0.1 mA cm(-2)时,基于G / TS / TO的工作电极的比电容值为148.5 mF cm(-2)。由于氧化钨的高电导率,二硫化钨的大电极/电解质界面和便捷的电子转移以及还原的氧化石墨烯的高表面积,G / TS / TO具有出色的倍率性能。对于由G / TS / TO制造的对称全固态超级电容器器件,在经过3000次充/放电过程后,仍可获得90%的电容保持率。该研究为高倍率容量超级电容器中基于含钨半导体的电极材料提供了新的研究策略。

著录项

  • 来源
    《Applied Surface Science》 |2019年第1期|150-158|共9页
  • 作者单位

    Tianjin Univ Technol, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China;

    Tianjin Univ Technol, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China;

    Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin Key Lab Photoelect Mat & Devices, Tianjin 300384, Peoples R China;

    Tianjin Univ Technol, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China;

    Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin Key Lab Photoelect Mat & Devices, Tianjin 300384, Peoples R China;

    Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin Key Lab Photoelect Mat & Devices, Tianjin 300384, Peoples R China;

    Tianjin Univ Technol, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China;

    Tianjin Univ Technol, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    Tungsten disulfide; Tungsten oxide; Reduced graphene oxide; Supercapacitor; Rate capability;

    机译:二硫化钨;氧化钨;氧化石墨烯;超级电容器;额定容量;

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