首页> 外文期刊>Applied Surface Science >Adsorption and decomposition of t-butylphosphine (TBP) on an InP(0 0 1)―(2 x 4)/c(2 x 8) surface studied by STM, TPD, and HREELS
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Adsorption and decomposition of t-butylphosphine (TBP) on an InP(0 0 1)―(2 x 4)/c(2 x 8) surface studied by STM, TPD, and HREELS

机译:STM,TPD和HREELS研究了叔丁基膦(TBP)在InP(0 0 1)-(2 x 4)/ c(2 x 8)表面上的吸附和分解

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Adsorption and decomposition of t-butylphosphine (TBP) on an InP(0 0 1)―(2 x 4)/c(2 x 8) surface have been studied by scanning tunneling microscopy (STM), temperature programmed desorption (TPD), and high-resolution electron energy loss spectroscopy (HREELS). It is found that TBP is adsorbed at the edge of the dimer rows (about 60%), in the missing dimer rows (about 30%), and at the center of the dimer rows (about 10%) at RT. The TPD result indicates that t-butyl radical and isobutylene are evolved from the TBP-adsorbed InP(0 0 1) surface. HREELS spectra suggest that TBP is partially dissociated on the surface at 300 K and that most of TBP is evolved up to 600 K through decomposition. The decomposition mechanism for TBP on the surface is discussed.
机译:通过扫描隧道显微镜(STM),程序升温脱附(TPD)研究了叔丁基膦(TBP)在InP(0 0 1)-(2 x 4)/ c(2 x 8)表面上的吸附和分解。和高分辨率电子能量损失谱(HREELS)。发现在室温下,TBP吸附在二聚体行的边缘(约60%),缺失的二聚体行(约30%)和二聚体行的中心(约10%)。 TPD结果表明,叔丁基自由基和异丁烯从TBP吸附的InP(0 0 1)表面析出。 HREELS光谱表明,TBP在300 K时在表面上部分解离,并且大部分TBP通过分解发展到600K。讨论了TBP在表面的分解机理。

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