SIMS round-robin study of depth profiling of arsenic implants in silicon

摘要

A round-robin study of arsenic depth profiling was conducted by Japanese SIMS users using arsenic-implanted silicon specimens with doses of 3 x 10~(14)to3 x 10~(16) ions/cm~2. The peak concentration of the implanted arsenic was about 11 at.%for the specimen with the dose of 3 x 10~(16) ions/cm~2. The shape of arsenic ion (AsSi~- and As~-) profiles was not affected by the incident angle of Cs~+ primary ion. The RSFs calculated from AsSi~-/Si_2~- and As~-/Si~- by point-by-point normalization were constant against arsenic doses. No dependence of RSFs on the angle of primary ion incidence was observed. Using an AsSi~- /Si_2 or As~-/Si~- point-by-point calibration method, arsenic with high concentration (11 at.%) in silicon can be quantitatively evaluated without being interfered by its matrix effect.