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Effects of the pressure on growth of carbon nanotubes by plasma-enhanced hot filament CVD at low substrate temperature

机译:等离子体在较低衬底温度下通过等离子体增强热丝CVD对碳纳米管生长的影响

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摘要

Carbon nanotubes were prepared on silicon wafers deposited with NiFe catalyst films and Ta buffer films by plasma-enhanced hot filament chemical vapor deposition, and growth of the carbon nanotubes under different pressure were investigated by scanning electron microscopy. It is found that the average length of the carbon nanotubes grown at the pressure of 15 Torr is larger than that at the pressure of 30 Torr. But, it is difficult to grow the carbon nanotubes when the pressure is 5 Torr. These indicate that the pressure greatly influences on the growth of carbon nanotubes. Combined with theories related to thermodynamics of alloy and glow discharge, it is analyzed and discussed that the pressure affects the growth of the carbon nanotubes. (C) 2004 Elsevier B.V. All rights reserved.
机译:通过等离子增强热丝化学气相沉积法在沉积有NiFe催化剂膜和Ta缓冲膜的硅片上制备了碳纳米管,并通过扫描电子显微镜研究了在不同压力下碳纳米管的生长。发现在15托的压力下生长的碳纳米管的平均长度大于在30托的压力下生长的碳纳米管的平均长度。但是,当压力为5托时,难以生长碳纳米管。这些表明压力极大地影响了碳纳米管的生长。结合与合金热力学和辉光放电有关的理论,分析和讨论了压力影响碳纳米管的生长。 (C)2004 Elsevier B.V.保留所有权利。

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