机译:通过光调制反射光谱研究由MOVPE生长的GaAs中的超薄InAs和InGaAs调制层
Czech Tech Univ, Dept Microelect, Prague 6, Czech Republic;
Acad Sci Czech Republ, Inst Phys, CZ-18221 Prague 8, Czech Republic;
photomodulated reflectance spectroscopy; X-ray diffraction; ultrathin InAs layer; MOVPE; quantum well; electronic states; MOLECULAR-BEAM EPITAXY; QUANTUM-WELLS; SINGLE; LASERS;
机译:通过X射线驻波和光致发光光谱研究了MOVPE生长的超薄InAs层中GaAs(001)中埋入的层的完美性
机译:通过X射线驻波和光致发光光谱研究了MOVPE生长的超薄InAs层中GaAs(001)中埋入的层的完美性
机译:InGaAs应变减小层覆盖的InAs / GaAs量子点结构,其特征在于光调制反射率
机译:反射光谱法用于原位监测MOVPE生长的InP / InGaAsP薄膜
机译:Igaas量子点的相干壮观= koh?怨恨不同的区别和Ingaas Pollarts
机译:硅衬底上直接生长的InAs / InGaAs / GaAs量子点太阳能电池
机译:Inas-Gaas和Inas-InGaas-Gaas量子点异质结构的温度依赖性调制反射率和光致发光
机译:通过分子束外延在Gaas衬底上生长的InGaas / alGaas pIN光调制器的缓冲层优化