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Structural and electrical characterization of strontium bismuth tantalate (SBT) thin films

机译:钽酸锶铋(SBT)薄膜的结构和电学表征

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Ferroelectric strontium bismuth tantalate (SBT) thin films were deposited by thermal metalorganic chemical vapour deposition (MOCVD) onto a complex layered Pt/IrO2/Ir/Ti(Al)N substrate. A study of ultra-violet (UV)-assisted rapid thermal processing (RTP) annealing strategies of the SBT thin films was performed. The influence of UV irradiation temperature and annealing atmosphere on the crystallinity of the deposited films was evaluated using both microstructural and electrical analysis techniques. A UV-RTP strategy in an oxygen atmosphere above 400 degrees C, followed by a furnace treatment at 700 degrees C, provided an optimum remnant polarization figure of merit. (c) 2005 Elsevier B.V. All rights reserved.
机译:通过热金属有机化学气相沉积(MOCVD)将铁电钽酸锶铋(SBT)薄膜沉积到复合层状Pt / IrO2 / Ir / Ti(Al)N衬底上。进行了SBT薄膜的紫外线(UV)辅助快速热处理(RTP)退火策略的研究。使用微结构和电分析技术评估了紫外线照射温度和退火气氛对沉积膜结晶度的影响。在高于400摄氏度的氧气气氛中进行UV-RTP策略,然后在700摄氏度的条件下进行炉处理,可提供最佳的剩余极化品质因数。 (c)2005 Elsevier B.V.保留所有权利。

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