The analysis of structural and electronic environments of silicon network in HWCVD deposited a-SiC:H films

摘要

Hydrogenated amorphous silicon carbon alloys (a-SiC:H) films were deposited by hot wire chemical vapour deposition (HWCVD) using SiH_4 and C_2H_2 as precursor gases. a-SiC:H films were characterized by Fourier Transform Infrared (FUR) spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Solid-state plasmon of Si network shifts from 19.2 to 20.5 eV by varying C_2H_2 flow rate from 2 to 10 sccm. Incorporation of carbon content changes the valence band structure and s orbital is more dominant than sp and p orbital with carbon incorporation.