METHOD OF DEPOSITING SILICON FILMS WITH REDUCED STRUCTURAL DEFECTS

摘要

-17-ABSTRACT OF THE DISCLOSUREMETHOD OF DEPOSITING SILICON FILMSWITH REDUCED STRUCTURAL DEFECTSSilicon films in integrated circuits are massproduced with reduced structural defects by passing areactant gas which contains silicon over a batch of wafersin a quartz chamber to deposit a silicon substance on boththe wafers in a quartz chamber and the quartz walls of thechamber; repeating the passing step on other batches ofwafers until the thickness of the silicon substance on thequartz walls exceeds a predetermined limit; directing aforceful stream of gas against the quartz walls to knockmicroscopic particles of the silicon substance therefrom;removing the knocked-off microscopic particles from thechamber; and continuing the passing and repeating stepswith no intervening acid etch of the silicon substance onthe quartz walls.