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METHOD OF DEPOSITING SILICON FILMS WITH REDUCED STRUCTURAL DEFECTS
METHOD OF DEPOSITING SILICON FILMS WITH REDUCED STRUCTURAL DEFECTS
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机译:减少结构缺陷的硅膜沉积方法
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摘要
Silicon films in integrated circuits are mass produced with reduced structural defects by passing a reactant gas which contains silicon over a batch of wafers in a quartz chamber to deposit a silicon substance on both the wafers in a quartz chamber and the quartz walls of the chamber; repeating the passing step on other batches of wafers until the thickness of the silicon substance on the quartz walls exceeds a predetermined limit; directing a forceful stream of gas against the quartz walls to knock microscopic particles of the silicon substance therefrom; removing the knocked-off microscopic particles from the chamber; and continuing the passing and repeating steps with no intervening acid etch of the silicon substance on the quartz walls.
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