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The dependence of the size distribution of the pulsed laser deposited micron sized particles from the laser fluence and its influence to the thickness of the deposited layer

机译:脉冲激光沉积微米级粒子的尺寸分布与激光通量的关系及其对沉积层厚度的影响

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During the pulsed laser deposition of Teflon the thin layer is built up by particles with dimensions from molecular to micrometer range deposited onto the substrate surface. With the knowledge of the size distribution of the deposited particles we used a model for simulating and predicting the growth of the thin film. An ArF excimer laser was used to deposit Teflon particles on the surface of a Silicon wafer under real PLD conditions. The target was pre-ablated by 1000 pulses, the pressure in the PLD chamber was 2 × 10~(-5) Torr and the substrate temperature was 250 ℃. The number of the particulates deposited by 10 laser pulses and their size distribution were determined by atomic force (AFM) and optical microscopes. Based on the AFM images the relation between the dimensions and volume of the investigated grains was also determined. At 3.2 J/ cm~2 laser fluence the size distribution of the particulates with dimensions above 500 nm could be well described with a first order exponential decay function having 2.38 μm decay constant. Below 100 nm the number of deposited Teflon grains increased by several orders of magnitude, however, their contribution to the total volume of the transferred material was found to be only about 2%. The results of the numerical simulations of the thin film growth were in good agreement with our previous PLD experiments. The minimum number of the pulses required to obtain a contiguous layer and its thickness could also be estimated.
机译:在聚四氟乙烯的脉冲激光沉积过程中,薄层是由尺寸在分子到微米范围的颗粒沉积在基材表面上形成的。了解沉积颗粒的大小分布后,我们使用了一个模型来模拟和预测薄膜的生长。在真正的PLD条件下,使用ArF准分子激光在硅晶片的表面上沉积聚四氟乙烯颗粒。用1000个脉冲对靶进行预烧蚀,PLD室中的压力为2×10〜(-5)Torr,基板温度为250℃。通过原子力(AFM)和光学显微镜确定通过10个激光脉冲沉积的微粒数量及其尺寸分布。基于AFM图像,还确定了所研究的晶粒的尺寸和体积之间的关系。在3.2 J / cm〜2的激光能量密度下,可以使用衰减常数为2.38μm的一阶指数衰减函数很好地描述尺寸大于500 nm的颗粒的尺寸分布。在100nm以下,沉积的聚四氟乙烯晶粒的数量增加了几个数量级,但是,发现它们对所转移的材料的总体积的贡献仅为约2%。薄膜生长的数值模拟结果与我们以前的PLD实验非常吻合。也可以估计获得连续层所需的最小脉冲数及其厚度。

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