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Pulsed laser photodeposition of a-Se nanofilms by ArF laser

机译:ArF激光脉冲激光沉积a-Se纳米膜

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Pulsed laser photodeposition from amorphous selenium aqueous colloid solutions using ArF laser radiation at a wavelength of λ = 193 nm has been investigated. Nanometer thick layers were obtained on UV transparent silica substrates in contact with the solution for various photodeposition parameters. Amorphous Se layers, 20 nm thick, were obtained typically by 40 laser pulses of 30 ns duration with a fluence of 50 mJ/cm~2. Deposition thresholds for depositing 1 nm thick layers were as low as 5 pulses. The deposited nanometer thin surface morphology was analyzed by Evanescent Field Optical Microscopy, Scanning Electron Microscopy and Atomic Force Microscopy. The nanometer thicknesses were evaluated by utilizing the differential evanescent light pattern emanating from the substrates.
机译:研究了使用λ= 193 nm波长的ArF激光辐射从非晶态硒胶体水溶液中进行脉冲激光光沉积。对于各种光沉积参数,在与溶液接触的UV透明二氧化硅基板上获得了纳米厚的层。通常通过持续时间为30 ns的40个激光脉冲(注量为50 mJ / cm〜2)获得20 nm厚的非晶Se层。沉积1 nm厚层的沉积阈值低至5个脉冲。沉积的纳米薄表面形态通过瞬逝场光学显微镜,扫描电子显微镜和原子力显微镜分析。通过利用从基板发出的微分渐逝光图案来评估纳米厚度。

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