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The impurity Franz-Keldysh effect in 2D photonic macroporous silicon structures

机译:二维光子大孔硅结构中的杂质Franz-Keldysh效应

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摘要

We investigated the near-IR optical transmission spectra in 2D photonic macroporous silicon structures taking into account the linear electro-optical effect. The spectral dependence of optical absorption of macroporous silicon structures in the near-IR area (impurity absorption) has oscillating structure and varies under the "3/2" law at long wavelengths. This correlates with frequency dependence of the imaginary part of permittivity for optical transitions between impurity levels and the allowed bands of a crystal in an electric field (the impurity Franz-Keldysh effect). The experimental absorption spectra of macroporous silicon agree well with the corresponding spectral dependences of the electro-optical energy and the imaginary part of permittivity in the weak electric field approximation, thus confirming realization of the impurity Franz-Keldysh effect. The electric field of the reflected electromagnetic wave at the grazing angle of light incidence onto macropore surface changes effectively a local electric field on the macropore surface.
机译:考虑到线性电光效应,我们研究了二维光子大孔硅结构中的近红外光透射光谱。近红外区大孔硅结构的光吸收(杂质吸收)的光谱依赖性具有振荡结构,并且在长波长下根据“ 3/2”定律变化。这与在电场中杂质能级和晶体的允许带之间的光学跃迁的介电常数的虚部的频率依赖性相关(杂质弗朗兹-凯尔迪什效应)。大孔硅的实验吸收光谱与在弱电场近似中电光能量和介电常数的虚部的相应光谱依赖性非常吻合,从而确认了杂质Franz-Keldysh效应的实现。在光入射到大孔表面的掠射角处的反射电磁波的电场有效地改变了大孔表面上的局部电场。

著录项

  • 来源
    《Applied Surface Science》 |2008年第5p2期|3328-3331|共4页
  • 作者单位

    V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauki Pr., 03028 Kyiv, Ukraine;

    V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauki Pr., 03028 Kyiv, Ukraine;

    V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauki Pr., 03028 Kyiv, Ukraine;

    V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauki Pr., 03028 Kyiv, Ukraine;

    V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauki Pr., 03028 Kyiv, Ukraine;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    macroporous silicon; impurity Franz-Keldysh effect;

    机译:大孔硅杂质Franz-Keldysh效应;

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