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Porosity Depth Profiling Of Spin-coated Silica Thin Films Produced By Different Precursors Sols

机译:不同前体溶胶产生的旋涂二氧化硅薄膜的孔隙深度剖析

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The structural evolution of nanoporous silica thin films was studied by Doppler broadening spectroscopy (DBS), 2-3 gamma ratio of positronium (3γ-PAS) and Fourier transform infrared spectroscopy (FT-IR). Four series of silica films with thickness in the 300-600 nm range were deposited by spin coating on Si substrate changing the content of sacrificial porogen in the sol precursors. The effect on the porosity of different amount of porogen and of the thermal treatments in the 400-900 ℃ temperature range have been highlighted. The evolution of the porosity is discussed considering the removal of porogen and of the silanol Si-OH groups by thermal treatments as pointed out by FT-IR. Pores with size from less than 1 nm up to sizes larger than 2.0 nm have been detected. In samples with maximum porogen load oPs escaping was observed indicating onset of connected porosity. At temperatures higher than 700 ℃ a decrease of the porosity due to a progressive pore collapsing was evidenced. A strong correlation was found between the shift of the Si-O-Si transversal optical (TO_3) mode in the FT-IR spectra and the pore size in the porous silica films as revealed by DBS and 37-PAS.
机译:利用多普勒增宽光谱(DBS),正电子原子比为2-3的γ(3γ-PAS)和傅里叶变换红外光谱(FT-IR)研究了纳米多孔二氧化硅薄膜的结构演变。通过旋转涂覆在Si基板上沉积厚度在300-600 nm范围内的四个系列的二氧化硅膜,从而改变溶胶前体中牺牲性致孔剂的含量。在400-900℃的温度范围内,强调了不同数量的成孔剂和热处理对孔隙率的影响。讨论了孔隙度的演变,考虑了通过FT-IR指出的通过热处理去除成孔剂和硅烷醇Si-OH基团的情况。已检测到尺寸从小于1 nm到大于2.0 nm的孔。在最大成孔剂负载oP的样品中,观察到逸出现象表明连接的孔隙开始出现。在高于700℃的温度下,由于逐渐的孔隙塌陷,孔隙率降低了。如DBS和37-PAS所揭示,在FT-IR光谱中Si-O-Si横向光学(TO_3)模式的位移与多孔二氧化硅膜的孔径之间存在很强的相关性。

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