Embedded Structure Of Silicon Monoxide In Sio_2 Films

摘要

The structure of SiO_x (x = 1.94) films has been investigated using both X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). The SiO_x films were deposited by vacuum evaporation. XPS spectra show that SiO_(1.94) films are composed of silicon suboxides and the SiO_2 matrix. Silicon clusters appeared only negligibly in the films in the XPS spectra. Si_3O~+ ion species were found in the TOF-SIMS spectra with strong intensity. These results reveal the structure of the films to be silicon monoxide embedded in SiO_2, and this structure most likely exists as a predominant form of Si_3O_4. The existence of Si-Si structures in the SiO_2 matrix will give rise to dense parts in loose glass networks.