Ferroelectric Properties Of Bilayer Structured Pb(zr_(0.52)ti_(0.48)) o_3/srbi_2ta_2o_9 (pzt/sbt) Thin Films on Pt/tio_2/sio_2/si Substrates

摘要

Pb(Zr_(0.52)Ti_(0.48))O_3 (PZT) thin films with large remanent polarization and SrBi_2Ta_2O_9 (SBT) thin films with excellent fatigue-resisting characteristic have been widely studied for non-volatile random access memories, respectively. To combine these two advantages bilayered Pb(Zr_(0.52)Ti_(0.48))O_3/SrBi_2Ta_2O_9 (PZT/SBT) thin films were fabricated on Pt/TiO_2/SiO_2/Si substrates by chemical solution deposition method. X-ray diffraction patterns revealed that the diffraction peaks of PZT/SBT thin films were completely composed of PZT and SBT, and no other secondary phase was observed. The electrical properties of the bilayered structure PZT/SBT films have been investigated in comparison with pure PZT and SBT films. PZT/SBT bilayered thin films showed larger remanent polarization (2P_r) of 18.37 μC/cm~2 than pure SBT and less polarization fatigue up to 1 × 10~9 switching cycles than pure PZT. These results indicated that this bilayered structure of PZT/SBT is a promising material combination for ferroelectric memory applications.