Si islands with 1×1 termination formed by desorption of Tl from Si(111) surface

摘要

We report on the scanning tunneling microscopy observation of small Si islands with a 1 × 1 termination on the Si(111) surface. The islands were prepared by thermal desorption of Tl from the Tl-terminated silicon sample by means of annealing to 400-600 ℃. Structure of the islands is interpreted as the dimer-stacking-fault (DS) model. We propose that the otherwise unfavorable 1×1 termination is stabilized by subsurface dimers of DS.