SILICON GROWTH ATOP β -FeSi_2 ISLANDS ON Si(111) SUBSTRATE AND Si(111)-Cr SURFACE PHASES

摘要

Silicon molecular beam epitaxy atop β -FeSi_2 nanosize islands with density of 5 · 10~9 cm~(-2), grown on Si(111)7x7 surface and Si(111)-Cr surface phases, have been observed at 800℃ by LEED and atomic force microscopy. It was shown, that silicon thickness 0.1 μm is not enough for a full burying of iron disilicide clusters in silicon. It was revealed from in situ electrical measurements that the minimal influence on electrical properties of the silicon layer render iron disilicide clusters grown on Si(111)7x7-Cr surface phase.