InSb quantum dots and quantum rings on InAs-rich surface

摘要

We report a study of InSb nanoobjects (quantum dots and quantum rings) grown on InAs-rich surface by liquid phase epitaxy. Characterization of the sample surface was performed using atomic force microscopy (AFM). The bimodal formation of the uncapped InSb quantum dots (QDs) was observed for the growing on a binary InAs substrate. Uniform high-density (1 × 10~(10) cm~(-2)) quantum dots with a height of 3 nm were obtained at T= 420-430 ℃, whereas low-density (5 × 10~8 cm~(-2))big quantum dots were 9 nm in height. As a buffer layer, lattice-matched InAsSbo.12Po.25 solid solution was deposed on InAs substrate using metal-organic vapour phase epitaxy. Deposition from the InSb melt on the buffer layer resulted in the formation of InSb nanoobjects with density as high as 3 × 10~(10)cm~(-2).