Pulsed Plasma Ion Source To Create Si Nanocrystals In Sio_2 Substrates

摘要

A pulsed KrF excimer laser of irradiance of about 10~8 W/cm~2 was utilized to synthesize Si nanocrystals on SiO_2/Si substrates The results were compared with that ones obtained by applying low bias voltage to Si(100) target in order to control the kinetic energy of plasma ions. Glancing incidence X-ray diffraction spectra indicate the presence of silicon crystalline phases, i.e. (111) and (2 2 0), on SiO_2/Si substrates. The average Si nanocrystal size was estimated to be about 45 nm by using the Debye-Scherrer formula. Scanning electron microscopy and atomic force microscopy images showed the presence of nanoparticles of different size and shape. Their distribution exhibits a maximum concentration at 49 nm and a fraction of 14% at 15 nm.