Characterization of single-crystalline In_2O_3 films deposited on Y-stabilized ZrO_2 (100) substrates by MOCVD

摘要

Epitaxial In_2O_3 films have been deposited on Y-stabilized ZrO_2 (YSZ) (100) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450-750 ℃). The film deposited at 650 ℃ has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In_2O_3(100)||YSZ(100) with In_2O_3[001]||YSZ[001]. The Hall mobility of the single-crystalline In_2O_3 film deposited at 650℃ is as high as 66.5 cm~2 V~(-1) s~(-1) with carrier concentration of 1.5 × 10~(-19)cm~(-3) and resistivity of 6.3 × 10~(-3)Ω cm. The absolute average transmittance of the obtained films in the visible range exceeds 95%.