机译:通过SILAR方法在玻璃和铜基板上生长p型Cul的比较研究
Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra, India;
Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra, India;
University of Poitiers, Laboratory of Catalysis in Organic Chemistry, LA CCO, UMR CNRS 6503, Poitiers-86000, France;
Fuel Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai - 400085, Maharashtra India;
Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra, India;
SILAR; band gap; thin film; hydrophobic;
机译:沉积温度对在硅基板上生长的SnS薄膜性能的影响-与在玻璃基板上生长的膜的结构和光学性质的比较研究
机译:n型和半绝缘4H-SiC衬底上生长的p型4H-SiC的比较研究
机译:Sill方法沉积硫化铁(CUS-Fe)和铁铅(PBS-Fe)薄膜光学吸光度和结构性能的比较研究
机译:在n型和半绝缘4H-SiC衬底上生长的p型4H-SiC的比较研究
机译:高氮压溶液法生长的补偿氮化镓衬底中电荷转移的光诱导电子顺磁共振研究
机译:Si(001)晶片和FTO玻璃衬底上水热生长ZnO纳米棒的光催化活性比较研究
机译:Sill方法沉积硫化铁(CUS-Fe)和铁铅(PBS-Fe)薄膜光学吸光度和结构性能的比较研究