Titanium buffer layer for improved field emission of CNT based cold cathode

摘要

Carbon nanotube (CNT) based cold cathodes are considered to be the most promising material for fabrication of next generation high-performance flat panel displays and vacuum microelectronic devices. Adhesion of CNTs with the substrate and the contact resistance between them are two of the important issues to be addressed in CNT based field emission (FE) devices. Here in this work, a buffer layer of titanium (Ti) is deposited prior to the catalyst deposition and the growth was carried out using chemical vapor deposition (CVD) technique. There was significant increase in emission current density from 10 mA/cm~2 to 30 mA/cm~2 at the field of 4 V/μm by the use of titanium buffer layer due to much less dense growth of CNTs of smaller diameter. Field emission results suggest that the adhesion of the CNTs to the substrate has improved. The titanium buffer layer has also lowered the contact resistance between the CNTs and the substrate because of which a stable emission of 30 mA for a longer duration was obtained.