机译:GaAs衬底上生长的β-Ga_2O_3纳米结构的合成与表征
Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, M.P., India;
Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, M.P., India;
Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, M.P., India;
Semiconductor Laser Section, Raja Ramanna Centre for Advanced Technology, Indore 452 013, M.P., India;
Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, M.P., India;
Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, M.P., India;
Accelerator Components Fabrication Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, M.P., India;
Semiconductor Laser Section, Raja Ramanna Centre for Advanced Technology, Indore 452 013, M.P., India;
optical absorption; photoluminescence; β-Ga_2O_3, Nanosheets; nanowires;
机译:生长压力对MOCVD法在GaAs(100)衬底上生长β-Ga_2O_3薄膜特性的影响
机译:技术条件和金簇簇岛对VAs法在GaAs衬底上生长的Ga_2O_3纳米线形貌的影响
机译:GaAs衬底上生长的变质InAs / InGaAs纳米结构在电信波长处的单量子点发射
机译:在纳米结构的硅衬底上生长的GaAs薄膜的特性
机译:基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
机译:GaAs(210)衬底上生长的多层InGaAs纳米结构
机译:GaAs衬底上生长的变质InAs / InGaAs纳米结构在电信波长处的单量子点发射
机译:低压金属有机化学气相沉积在Gaas衬底上生长InTlsb / Insb的表征