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The study of optimal oxidation time and different temperatures for high quality VO_2 thin film based on the sputtering oxidation coupling method

机译:基于溅射氧化耦合法研究高质量VO_2薄膜的最佳氧化时间和不同温度

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摘要

The high quality Vanadium dioxide (VO_2) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO_2 thin film samples exhibit a good metal-insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/I shows a significant linear relationship among 703 K-783 K, in good agreement with the Wagner's high-temperature oxidation model.
机译:通过简单的新型溅射氧化偶合(SOC)方法已经成功地在蓝宝石上制造了高质量的二氧化钒(VO_2)薄膜。所有VO_2薄膜样品在约340 K时均表现出良好的金属-绝缘体转变(MIT)。已通过实验研究了在不同温度下的最佳氧化时间。我们报告了最佳氧化时间与101 nm厚度的金属钒薄膜样品在空气中氧化的不同温度之间的关系。发现最佳氧化时间ln(t)作为温度1 / I的函数,在703 K-783 K之间显示出显着的线性关系,与Wagner的高温氧化模型高度吻合。

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  • 来源
    《Applied Surface Science》 |2011年第21期|p.8824-8827|共4页
  • 作者单位

    Department of Applied Physics, Donghua University, No. 2999 North Renmin Road, Songjiang District, Shanghai 201620, PR China;

    Department of Applied Physics, Donghua University, No. 2999 North Renmin Road, Songjiang District, Shanghai 201620, PR China;

    Department of Applied Physics, Donghua University, No. 2999 North Renmin Road, Songjiang District, Shanghai 201620, PR China;

    Department of Applied Physics, Donghua University, No. 2999 North Renmin Road, Songjiang District, Shanghai 201620, PR China;

    Department of Applied Physics, Donghua University, No. 2999 North Renmin Road, Songjiang District, Shanghai 201620, PR China;

    Department of Applied Physics, Donghua University, No. 2999 North Renmin Road, Songjiang District, Shanghai 201620, PR China;

    Department of Applied Physics, Donghua University, No. 2999 North Renmin Road, Songjiang District, Shanghai 201620, PR China;

    Department of Applied Physics, Donghua University, No. 2999 North Renmin Road, Songjiang District, Shanghai 201620, PR China;

    National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083, PR China;

    National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    vanadium dioxide; sputtering oxidation coupling; optimal oxidation time; temperature;

    机译:二氧化钒;溅射氧化偶合;最佳氧化时间;温度;
  • 入库时间 2022-08-18 03:07:08

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