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First-principles study on the electronic structure and optical properties for SnO_2 with oxygen vacancy

机译:具有氧空位的SnO_2的电子结构和光学性质的第一性原理研究

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The electronic structure and optical properties of SnO_2 with consideration of oxygen vacancy are computed using the first-principles plane-wave pseudopotential method based on the density functional theory. The results show that SnO_2 with oxygen vacancy has a band gap of 1.03 eV, and the Fermi level shift upward to the conduction band, showing a typical n-type character; besides oxygen vacancy would introduce a new electronic state within the band gap compared with that of pure SnO_2. Moreover, certain impurity levels are located near the top of the valence band, which narrows the band gap of the compound. Optical properties, including the dielectric function, reflectivity, absorption coefficient and the energy-loss spectrum are calculated and the results are in good agreement with the experiments. The calculated absorption coefficient shows that SnO_2 with oxygen vacancy exhibits an absorption band in the visible region, centered at 2.1OeV (588 nm). It is demonstrated that oxygen vacancy causes the visible light absorption band.
机译:基于密度泛函理论,采用第一性原理平面波pseudo势法计算了考虑氧空位的SnO_2的电子结构和光学性质。结果表明,具有氧空位的SnO_2的带隙为1.03 eV,费米能级向上移动至导带,表现出典型的n型特征。与纯SnO_2相比,氧空位会在带隙内引入新的电子态。而且,某些杂质水平位于价带的顶部附近,这使化合物的带隙变窄。计算了包括介电函数,反射率,吸收系数和能量损失谱在内的光学性质,结果与实验吻合良好。计算得出的吸收系数表明,具有氧空位的SnO_2在可见光区域显示一个吸收带,中心为2.1OeV(588 nm)。已经证明氧空位引起可见光吸收带。

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