Realization of Ag-S codoped p-type ZnO thin films

摘要

Ag-S codoped ZnO films have been grown on quartz substrates by e-beam evaporation at low temperature (100℃). The effects of Ag_2S content on the structural and electrical properties of the films were investigated. The results showed that 2 wt% Ag_2S doped films exhibited p-type conduction, with a resistivity of 0.0347 Ω cm, a Hall mobility of 9.53 cm~2 V~(-1) s~(-1), and a hole concentration of 1.89 × 10~(19) cm~(-3) at room temperature. The X-ray photoelectron spectroscopy measurements showed that Ag and S have been incorporated into the films. To further confirm the p-type conduction of Ag-S codoped ZnO films, a ZnO:(Ag, S)/i-ZnO/ZnO:Al homojunction was fabricated and rectifying behaviors of which was measured. High electrical performance and low growth temperature indicate that Ag_2S is a promising dopant to fabricate p-type Ag-S codoped ZnO films.