Transparent conductive Ga_2O_3/Cu/ITO multilayer films prepared on flexible substrates at room temperature

摘要

Transparent conductive Ga_2O_3/Cu/ITO films were prepared on the polyethylene terephthalate (PET) substrates using radio frequency (RF) and direct current (DC) magnetron sputtering without substrates heating. The effects of Ga_2O_3 layer thickness and Cu layer thickness on the optical and electrical properties of the Ga_2O_3/Cu/ITO films were studied. Changes in the optoelectrical properties of Ga_2O_3/Cu (4.2 nm)/ITO (30 nm) films were investigated with respect to the Ga_2O_3 layer thickness. The maximum transmission of 86%, the sheet resistance of 45 Ω/sq and the figure of merit of 8.89 × 10~(-2) Ω~(-1) were achieved for Ga_2O_3 (15 nm)/Cu (4.2 nm)/ITO (30 nm) films. The optoelectrical properties of the Ga_2O_3/Cu/ITO films were also significantly influenced by the thickness of the Cu layer. When the thickness of Cu layer was 3.7 nm, the maximum transmission of 87.6%, the sheet resistance of 50 Ω/sq and the figure of merit of 9.26 × 10~(-2) Ω~(-1) were obtained for the Ga_2O_3 (15 nm)/Cu/ITO (30 nm) films.