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Electrodeposited ZnIn2S4 onto TiO2 thin films for semiconductor-sensitized photocatalytic and photoelectrochemical applications

机译:将ZnIn2S4电沉积到TiO2薄膜上,用于半导体敏化的光催化和光电化学应用

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In this study, ZnIn2S4/TiO2 heterostructure was successfully synthesized on ITO-coated glass substrates via a facile two-step process from aqueous solution. First, TiO2 thin film was prepared by sol-gel and deposited onto ITO coated glass substrate by spin-coating method. Then the zinc indium sulfide semiconductor was fabricated via electrodeposition technique onto TiO2/ITO coated glass electrode. The X-ray diffraction patterns confirm that the heterostructure is mixed of both Anatase TiO2 and Rhombohedric ZnIn2S4. The scanning electron microscopy (SEM) images show that the morphology change with the deposition of ZnIn2S4 over TiO2 thin film and a total coverage of the electrode surface was obtained. Optical absorption spectroscopy study of ZnIn2S4/TiO2 heterostructure exhibits a remarkable red-shift compared to the TiO2 and ZnIn2S4 achieve the best efficiency of visible light absorption. Therefore, it is expected to apply to visible-light photocatalysis and solar cells. To investigate the effect of the heterojunction on the photocatalytic activity of ZnIn2S4/TiO2 thin films, photodegradation of methylene blue in the presence of ZnIn2 S-4 was performed. ZnIn2S4/TiO2 heterostructure exhibited strong photocatalytic activity, and the degradation of methylene blue eached 91% after irradiation only for 4 h. Also, the study of the photocurrent density produced by ZnIn2S4/TiO2 thin film electrode reached 0.8 mA cm(-2), about four times higher than that measured on TiO2 thin film. These results indicate that the heterojunction have a better photo-electrochemical performance than the pure TiO2 thin films under illumination. As a result, the obtained ZnIn2S4/TiO2 heterostructure would have great potential in photocatalytic and Photoelectrochemical devices. (C) 2015 Elsevier B.V. All rights reserved.
机译:在本研究中,通过简便的两步法从水溶液中成功地在ITO涂层玻璃基板上合成了ZnIn2S4 / TiO2异质结构。首先,通过溶胶-凝胶法制备TiO 2薄膜,并通过旋涂法将其沉积在涂有ITO的玻璃基板上。然后通过电沉积技术在TiO2 / ITO涂层玻璃电极上制备了锌铟硫化物半导体。 X射线衍射图证实了异质结构是锐钛矿型TiO2和菱形ZnIn2S4的混合。扫描电子显微镜(SEM)图像显示,随着ZnIn2S4在TiO2薄膜上的沉积,形貌发生变化,并获得了电极表面的总覆盖率。 ZnIn2S4 / TiO2异质结构的光吸收光谱研究与TiO2和ZnIn2S4实现了最佳的可见光吸收效率相比,表现出显着的红移。因此,期望将其应用于可见光光催化和太阳能电池。为了研究异质结对ZnIn2S4 / TiO2薄膜的光催化活性的影响,在存在ZnIn2 S-4的条件下进行了亚甲基蓝的光降解。 ZnIn2S4 / TiO2异质结构表现出很强的光催化活性,仅照射4 h,亚甲基蓝的降解率达到91%。此外,对ZnIn2S4 / TiO2薄膜电极产生的光电流密度的研究达到0.8 mA cm(-2),约为TiO2薄膜测量值的四倍。这些结果表明,在光照下,异质结比纯TiO2薄膜具有更好的光电化学性能。结果,所获得的ZnIn 2 S 4 / TiO 2异质结构将在光催化和光电化学装置中具有巨大的潜力。 (C)2015 Elsevier B.V.保留所有权利。

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