Ultralow field emission from thinned, open-ended, and defected carbon nanotubes by using microwave hydrogen plasma processing

摘要

Ultralow field emission is achieved from carbon nanotubes (CNTs) by using microwave hydrogen plasma processing. After the processing, typical capped CNT tips are removed, with thinned, open-ended, and defected CNTs left. Structural analyses indicate that the processed CNTs have more SP3-hybridized defects as compared to the pristine ones. The morphology of CNTs can be readily controlled by adjusting microwave powers, which change the shape of CNTs by means of hydrogen plasma etching. Processed CNTs with optimal morphology are found to have an ultralow turn-on field of 0.566 V/mu m and threshold field of 0.896 V/mu m, much better than 0.948 and 1.559 V/mu m of the as-grown CNTs, respectively. This improved FE performance is ascribed to the structural changes of CNTs after the processing. The thinned and open-ended shape of CNTs can facilitate electron tunneling through barriers and additionally, the increased defects at tube walls can serve as new active emission sites. Furthermore, our plasma processed CNTs exhibit excellent field emission stability at a large emission current density of 10.36 mA/cm(2) after being perfectly aged, showing promising prospects in applications as high-performance vacuum electron sources. (C) 2014 Elsevier B.V. All rights reserved.