Structure and antireflection properties of SiNWs arrays form mc-Si wafer through Ag-catalyzed chemical etching

摘要

A simple and low cost MACE method was demonstrated for efficiently texturing commercial mc-Si wafer at room temperature. The effects of fabrication parameters (deposition time, HF concentration, H2O2 concentration, and etching time) on the morphology structure, antireflection property of textured mc-Si were carefully studied. The large scale SiNWs arrays with different structure can be obtained under various fabrication conditions. Meanwhile, the results indicate that the fabricate parameters have important effect on the reflectance of textured mc-Si sample in the order of etching time > deposition time > H2O2 concentration > HF concentration. The comprehensive research results indicate that it is more beneficial for the nanowire arrays with tapering structure and the length of 13 mu m to obtain excellent antireflection property. Under these optimization conditions, the textured mc-Si shows an outstanding anti-reflectance ability of similar to 5.6%, which indicates that the Ag-catalysis etched mc-Si shows a huge potential application in high-efficiency polysilicon solar cells. (C) 2016 Elsevier B.V. All rights reserved.