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Magnetism in non-metal atoms adsorbed graphene-like gallium nitride monolayers

机译:非金属原子吸附石墨烯样氮化镓单层的磁性

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The electronic and magnetic properties of graphene-like gallium nitride (g-GaN) with adsorbed H, B, C, N, O, and F atoms were investigated using spin-polarized first-principles calculations. We found that H, B, C, N, O, and F atoms can be chemisorbed on a g-GaN monolayer. The total magnetic moments of 1.0, 2.0, 1.0, and 1.0 mu(B) are founded in B-, C-, N-, and F-adsorbed g-GaN monolayers, respectively. In addition, a half-metallic state appears in the N- and F-adsorbed g-GaN, while a spin-polarized semiconducting state appears in other g-GaN monolayers after the adsorption of B or C. These findings demonstrate that the magnetic properties of g-GaN can be effectively tuned by the adsorption of non-metal atoms. In particular, the F-adsorbed system that exhibits a half-metallic state and high Curie temperature of 367 K has great potential for application in spintronics. (C) 2017 Elsevier B.V. All rights reserved.
机译:使用自旋极化的第一性原理计算研究了吸附有H,B,C,N,O和F原子的石墨烯状氮化镓(g-GaN)的电子和磁性。我们发现H,B,C,N,O和F原子可以被化学吸附在g-GaN单层上。在B,C,N和F吸附的g-GaN单层中分别建立了1.0、2.0、1.0和1.0 mu(B)的总磁矩。另外,在吸附了N和F的g-GaN中,出现了半金属态,而在吸附了B或C后,其他g-GaN单层中出现了自旋极化半导体态。这些发现表明,磁性可以通过非金属原子的吸附有效地调节g-GaN的含量。尤其是,呈现半金属状态和367 K居里温度高的F吸附系统在自旋电子学中具有巨大的应用潜力。 (C)2017 Elsevier B.V.保留所有权利。

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