Properties of BSCCO thin films prepared by single-source MOCVD on different substrates

Fuflyigin V.N.; Kaul A.R.

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Properties of BSCCO thin films prepared by single-source MOCVD on different substrates

机译：单源MOCVD法在不同基板上制备BSCCO薄膜的性能

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Films of Bi2212 were prepared on single crystalline MgO, YSZ, SrTiO/sub 3/, LaAlO/sub 3/, and NdGaO/sub 3/ substrates by MOCVD with an aerosol source. Epitaxial thin films were grown on perovskite substrates. Post-annealing under reducing conditions resulted in an increase of T/sub c/ and j/sub c/ values.

机译：通过气溶胶源MOCVD在单晶MgO，YSZ，SrTiO / sub 3 /，LaAlO / sub 3 /和NdGaO / sub 3 /衬底上制备Bi2212薄膜。外延薄膜生长在钙钛矿衬底上。在还原条件下的后退火导致T / sub c /和j / sub c /值的增加。

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《IEEE Transactions on Applied Superconductivity》 |1995年第2期|P.1335-1338|共4页
作者
Fuflyigin V.N.; Kaul A.R.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类超导体、超导体材料;半导体技术;
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1. Properties of BSCCO thin films prepared by single-source MOCVD on different substrates [J] . Fuflyigin V.N., Kaul A.R., Pozigun S.A., IEEE Transactions on Applied Superconductivity . 1995,第2期

机译：单源MOCVD法在不同基板上制备BSCCO薄膜的性能
2. Structural and optical properties of cubic-CdS and hexagonal-CdS thin films grown by MOCVD on GaAs substrates using a single-source precursor C14H30CdN2S4 [J] . Choi IH, Yu PY Physica status solidi, B. Basic research . 2005,第8期

机译：使用单源前驱体C14H30CdN2S4通过MOCVD在GaAs衬底上生长的立方CdS和六方CdS薄膜的结构和光学性质
3. Pressure Dependence of the Photoluminescence from γ-In_2Se_3 Thin Films Prepared Using MOCVD with a Single-source Precursor [J] . In Hwan Choi, Hyeon Jeong Park Journal of the Korean Physical Society . 2014,第9期

机译：用单源前驱体MOCVD制备的γ-In_2Se_3薄膜的光致发光的压力依赖性
4. Substrate and composition effects on BSCCO thin films deposited by aerosol MOCVD [C] . P. B. Tavares, V. S. Amaral, D. Araujo, International Materials Symposium . 2002

机译：对气溶胶MOCVD沉积的BSCCO薄膜的基材和组成效果
5. MOCVD Grown InP and Related Thin Films on Silicon Substrates for Electron and Photonic Devices Applications. [D] . Zhong, Zhenyu. 2010

机译：在电子和光子器件应用的硅基板上MOCVD生长的InP和相关薄膜。
6. Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD [O] . Yung-Sheng Chen, Che-Hao Liao, Chie-Tong Kuo, 2014

机译：MOCVD制备的具有单和双异质结的InGaN薄膜中的铟滴形成
7. The effect of thermal annealing on the properties of thin alumina films prepared by low pressure MOCVD [O] . Haanappel V.A.C., Vendel D. van de, Corbach H.D. van, 1995

机译：热退火对低压mOCVD制备氧化铝薄膜性能的影响
8. Structure and properties of heteroepitaxial Pb(Zr(sub 0.35)Ti(sub 0.65))O(sub 3)/SrRuO(sub 3) multilayer thin films on SrTiO(sub 3)(100) prepared by MOCVD and RF sputtering [R] . Foster, C. M. , Csencsits, R. , Bai, G. R. , 1995

机译：通过mOCVD和RF溅射制备的srTiO（sub 3）（100）上异质外延pb（Zr（sub 0.35）Ti（sub 0.65））O（sub 3）/ srRuO（sub 3）多层薄膜的结构和性质

Properties of BSCCO thin films prepared by single-source MOCVD on different substrates

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